Tri-wavelength passively Q-switched Yb3+:GdAl3(BO3)4 solid-state laser based on WS2 saturable absorber |
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| Affiliation: | 1. Key Laboratory of Optoelectronic Materials Chemistry and Physics of CAS, Fujian Institute of Research on the Structure of Matter, CAS, Fuzhou, Fujian 350002, China;2. University of Chinese Academy of Sciences, Beijing 100039, China;1. Institute of Physics AS CR, Cukrovarnicka 10, 16253 Prague, Czech Republic;2. Charles University, Faculty of Mathematics and Physics, Ke Karlovu 5, 12116 Prague, Czech Republic;3. Institute of Physics, University of Tartu, W. Oswaldi 1, 50411 Tartu, Estonia;1. Centro de Investigación en Materiales Avanzados S. C., Miguel de Cervantes 120, Chihuahua 31136, Chihuahua, Mexico;2. Cátedra CONACYT Assigned to Department of Physics of Materials, Centro de Investigación en Materiales Avanzados S. C., Miguel de Cervantes 120, Chihuahua 31136, Chihuahua, Mexico;3. Instituto de Física y Matemáticas, Universidad Tecnológica de la Mixteca, Huajuapan de León, Oaxaca, Mexico;1. State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, People''s Republic of China;2. V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine;1. Department of Physics and Materials Science & Engineering, Jaypee Institute of Information Technology, A 10, Sector 62, Noida 201307, Uttar Pradesh, India;2. University of Sydney, New South Wales, Australia;3. Department of Chemistry, BITS, Pilani – K. K. Birla Goa Campus, Zuarinagar, Goa 403726, India;1. Department of Physics and Technology of Nanostructures, Peter the Great St. Petersburg Polytechnic University, St. Petersburg, 195251, Russia;2. Department of Physics and Technology of Nanostructures, St. Petersburg Academic University, St. Petersburg, 194021, Russia;3. Department of Physics and Mathematics, University of Eastern Finland, P.O. Box 111, FI-80101, Joensuu, Finland;1. Thin Film Centre, PSG College of Technology, Coimbatore 641 004, India;2. Center for Nanomaterials and MEMS, Nitte Meenakshi Institute of Technology, Yelahanka, Bangalore 560064, India;3. Department of Physics, Coimbatore Institute of Technology, Coimbatore 641 014, India;4. Department of Instrumentation, Indian Institute of Science, Bangalore 560 012, India |
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| Abstract: | Using the WS2 nanosheets prepared by a facile hydrothermal reaction as saturable absorber (SA), we demonstrate a tri-wavelength passively Q-switching operation of a diode-pumped Yb:GdAl3(BO3)4 (Yb:GAB) crystal laser for the first time. The single pulse energy up to 1.30 μJ with the output power of 140 mW is obtained. The corresponding pulse width and repetition frequency rate are 440 ns and 107.8 kHz, respectively. The stable pulsed laser operates at 1044.9, 1045.6 and 1048.5 nm, simultaneously. This work suggests that solvothermal synthesized WS2 could be a promising SA to realize a simultaneously multi-wavelength laser operation. |
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| Keywords: | Solid-state laser Q-switched Multi-wavelength Saturable absorber |
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