（英）D波段InP基高增益、低噪声放大芯片的设计与实现

利用90-nm InAlAs/InGaAs/InP HEMT工艺设计实现了两款D波段（110~170 GHz）单片微波集成电路放大器。两款放大器均采用共源结构，布线选取微带线。基于器件A设计的三级放大器A在片测试结果表明：最大小信号增益为11.2 dB@140 GHz，3 dB带宽为16 GHz，芯片面积2.6×1.2 mm2。基于器件B设计的两级放大器B在片测试结果表明：最大小信号增益为15.8 dB@139 GHz，3dB带宽12 GHz，在130~150 GHz频带范围内增益大于10 dB，芯片面积1.7×0.8 mm2，带内最小噪声为4.4 dB、相关增益15 dB@141 GHz，平均噪声系数约为5.2 dB。放大器B具有高的单级增益、相对高的增益面积比以及较好的噪声系数。该放大器芯片的设计实现对于构建D波段接收前端具有借鉴意义。

Design and Realization of D-band InP MMIC Amplifier with High-gain and Low-noise

In this paper, two D-band (110~170 GHz) monolithic millimeter-wave integrated circuit (MMIC) amplifiers have been designed and realized using 90-nm InAlAs/InGaAs/InP high gain electron mobility transistors (HEMT) technology. The amplifiers are developed in common source and microstrip technology. The three-stage MMIC amplifier A is designed based on device A and measured on wafer with a small-signal peak gain of 11.2 dB at 140 GHz and 3 dB bandwidth is 16 GHz with a chip size of 2.6×1.2 mm2. The two-stage MMIC amplifier B is designed based on device B and measured on wafer with a small-signal peak gain of 15.8 dB at 139 GHz and 3dB bandwidth is 12 GHz and the gain higher than 10 dB from 130 GHz to 150 GHz with a chip size of 1.7×0.8 mm2, the amplifier also shows an excellent noise character with noise figure of 4.4 dB with the associated gain of 15 dB is acquired at 141 GHz and the average noise figure is about 5.2 dB over the bandwidth. The amplifier B exhibits a higher gain-per-stage, competitive gain-area ratio and lower noise figure. The successful realization of MMIC amplifiers is of great potential for receiver-front-end applications at D-band.