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Effects of Xe+ irradiation on Ti3SiC2 at RT and 500 °C
Affiliation:1. Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, China;2. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109, USA;3. School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China;1. Institute for Advanced Ceramics, School of Materials Science and Engineering, Harbin Institute of Technology, Heilongjiang, Harbin 150080, China;2. Innovation Research Team for Advanced Ceramics, Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Sichuan, Mianyang, 621900, China;1. Innovation Research Team for Advanced Ceramics, Institute of Nuclear Physics and Chemistry, ChinaAcademy of Engineering Physics, Mianyang, 621900, China;2. School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China;3. School of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London, E1 4NS, United Kingdom;4. Corso Duca Degli Abruzzi 24, 10129, Torino, Italy;5. Institute of Materials Research, Slovak Academy of Sciences, Watsonova, 47, 040 01, Kosice, Slovakia;1. Forschungszentrum Jülich GmbH, Institute of Energy and Climate Research, Materials Synthesis and Processing (IEK-1), 52425 Jülich, Germany;2. Institute of Ceramics and Glass (ICV-CSIC), Campus Cantoblanco, 28049 Madrid, Spain
Abstract:In this study, effects of a 400 keV Xe+ irradiation on Ti3SiC2 were systematically investigated by transmission electron microscopy (TEM). At RT, results show that the Xe+ irradiation induced the dissociation of Ti3SiC2 to polycrystalline TiC first, and then the polycrystalline to TiC nanograins with the increasing fluence. However, there is no significant microstructure change observed on the sample irradiated at 500 °C. It is demonstrated that Ti3SiC2 had not been completely amorpherized even up to 116.9 displacements per atom (dpa).
Keywords:MAX  Radiation damage  TiC  Nano-grain
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