应用于TD-LTE的SiGe BiCMOS功率 放大器的设计

针对准第四代无线通信技术TD-LTE中2.570~2.620 GHz频段的应用,设计了一款基于IBM SiGe BiCMOS7WL工艺的射频功率放大器。该功率放大器工作于AB类,采用单端结构,由两级共发射极电路级联构成,带有基极镇流电阻,除两个谐振电感采用片外元件外,其他全部元件均片上集成,芯片面积为(1.004×0.736)mm2。测试结果表明,在3.3 V电源电压下,电路总消耗电流为109 mA,放大器的功率增益为16 dB,输出1 dB增益压缩点为15 dBm。该驱动放大器具有良好的输入匹配,工作稳定。

A SiGe BiCMOS Power Amplifier for TD-LTE

A SiGe BiCMOS power amplifier(PA) was presented for the 2.570~2.620 GHz band of the quazi fourth generation TD-LTE wireless application, which was based on IBM SiGe BiCMOS7WL process. This power amplifier worked in class AB single ended structure for which two stage common emitter structure with base ballast resistor was used. All components except two resonant inductances were integrated on-chip and the chip area was 1.004×0.736 mm2. Measurement results demonstrated that the circuit achieved 16 dB of gain, a 1 dB output compression point better than 15 dBm at 3.3 V supply voltage, and the total supply current was 109 mA. The power amplifier features good input impedance match and stays stable working.