Determining the energy levels of elementary primary defects in silicon

The purpose of the experiments described here was to determine the energy level spectrum of elementary primary Frenkel defects in the band gap of silicon, based on whether or not the rate of direct annihilation of these defects depends on their charge state. The results were obtained by jointly analyzing the states of the atomic and electronic subsystems of the crystal under varying conditions of irradiation of the sample with high-energy particles. It was established that these elementary primary defects have energy levels near E _c -0.28 eV, E _c -0.44 eV, E _c -0.65 eV, and E _c -0.86 eV. Fiz. Tekh. Poluprovodn. 33, 921–923 (August 1999)