在金属基片上以LNO为过渡层制备Pb(Zr0.53Ti0.47)O3薄膜的电性能

采用溶胶-凝胶法和快速热处理工艺,分别以不锈钢(SS)和镍合金(NC)为基片,成功制备了表面均匀、无裂纹的锆钛酸铅(Pb(Zn0.53Ti0.47)O3,简写为PZT)薄膜.为了缓解金属基片与PZT薄膜之间由于晶格常数和热膨胀系数不同所造成的不匹配状态,引入了镍酸镧(LaNiO3,简写为LNO)薄膜作为过渡层.XRD和SEM结果表明,经过600℃下30min的晶化,PZT薄膜已经由无定型转化为钙钛矿相.以LNO为过渡层,在NC金属基片上制备的PZT薄膜具有较高的介电常数和较低的损耗(1kHz下ε=717,tanδ=0.08),较低的漏电流(50kV/cm下J=2.6×10-7A/cm2)以及较好的铁电性能(+Pr=90μC/cm2,-Pr=14 μC/cm2,Ec=32.5kV/cm).同时,在SS基片上,通过引入LNO过渡层,制备的PZT薄膜也具有比较好的性能.

Electrical properties of sol- gel derived Pb(Zr0.53Ti0.47)O3 thin films on LNO -coated metal substrates

Smooth and crack free lead zirconate titanate (PZT) thin films were successfully deposited on stainless steel (SS) and nickel -chromium (NC) substrates by sol -gel method combined with a rapid thermal annealing process (RTA). An intermediate LaNiO3 layer was deposited between the PZT thin films and metal substrates to buffer the mismatch. X -ray diffraction and scanning electron micro scopy (SEM) reveal that amorphous PZT layers are crystallized into a perovskite phase with dense and smooth surface after annealed at 600℃ for 30min. Excellent properties such as high dielectric constant and low dielectric dissipation (e = 717, tanδ = 0.08, at 1kHz),low leakage current ( J = 2.6×10-7A/cm2, at 50 kV/cm), and typical hysteresis loop ( + Pr = 90μC/cm2, - Pr = 14μC/cm2, Ec =32.5 kV/cm) are obtained on LNO - coated NC substrates and good results are also obtained on LNO coated SS substrates.