Epitaxial growth of SnO2 film on Sn-doped TiO2(110)

Using a simple vacuum deposition-and-annealing method, Sn-doped TiO₂ (110) single crystals were prepared. Compared with the case of a pure TiO₂ substrate, the lattice mismatch between SnO₂ and the Sn-doped TiO₂ was reduced to −2.85% for the a-axis from −3.25 to −2.85% and for the c-axis from −7.35 to −6.62%. Surface morphologies of deposited SnO₂ films were compared on the Sn-doped TiO₂ (110) and on the pure TiO₂ (110). Results showed that the use of Sn-doped TiO₂ (110) single crystal as a substrate was favorable for growing epitaxial SnO₂ (110) films.