Silicon network in a-Si:H films containing ordered inclusions

a-Si:H films with inclusions of (SiH₂)_n clusters or Si nanocrystals have been grown by magnetron-assisted SiH₄ decomposition (dc-MASD). The films were characterized by the microstructural parameter R=0.7–1.0. Ultrasoft X-ray emission spectroscopy was applied to establish the effect of these inclusions on the increasing ordering of Si network. It is shown that, irrespective of the nature of the inclusions, their effect is strongest for films of intrinsic material deposited at high temperatures (up to 400°C).