Nucleation and growth of diamond films on aluminum nitride by hot filament chemical vapor deposition |
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| Affiliation: | 1. CEA, LIST, Diamond Sensors Laboratory, Gif-sur-Yvette Cedex 91191, France;2. Thales Research and Technology, Route Dèpartementale 128, Palaiseau 91767, France;3. Thales Electron Devices, ZI de Vongy, Thonon-les-Bains 74202, France;1. Université de Lyon (France), Laboratoire Hubert Curien (UMR 5516), Université Jean Monnet, 42000 Saint-Étienne, France;2. Laboratoire Georges Friedel (UMR 5307), Ecole Nationale Supérieure des Mines, 42023 Saint-Etienne, France;3. Université de Lyon (France), Institut des Sciences Analytiques UMR 5280, CNRS/Université Lyon 1, 69100 Villeurbanne, France;4. Instituto de Ciencia de Materiales de Sevilla (CSIC-US), 41092 Sevilla, Spain |
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| Abstract: | Nucleation and growth of diamond films on aluminum nitride (ALN) coatings were investigated by scanning electron microscopy, Raman spectroscopy and scratch test. ALN films were grown in a magnetron sputtering deposition. The substrates were Si(111) and tungsten carbide (WC). Chemical vapor deposition (CVD) diamond films were deposited on ALN films by hot filament CVD. The nucleation density of diamond on ALN films was found to be approximately 105 cm−2, whereas over 1010 cm−2 after negative bias pre-treatment for 35 min was −320 V, and 250 mA. The experimental studies have shown that the stresses were greatly minimized between diamond overlay and ALN films as compared with WC substrate. The results obtained have also confirmed that the ALN, as buffer layers, can notably enhance the adhesion force of diamond films on the WC. |
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