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Processing and dielectric characterization of Ba0.3Sr0.7TiO3 thin films on alumina substrates
Affiliation:1. Jožef Stefan Institute, Jamova 39, 1000 Ljubljana, Slovenia;2. Ceramics Laboratory, Ecole Polytechnique Fédérale de Lausanne, EPFL, CH-1015 Lausanne, Switzerland;3. HYB d.o.o., 8310 Sentjernej, Slovenia;1. Univ de Haute Alsace (UHA), CNRS, Equipe Matériaux à Porosité Contrôlée (MPC), Institut de Science des Matériaux de Mulhouse (IS2M) UMR 7361, ENSCMu, 3bis rue Alfred Werner, 68093 Mulhouse Cedex, France;2. Aix-Marseille Université, LISA EA 4672, 13397 Marseille Cedex 20, France;1. College of Engineering and Applied Science, University of Cincinnati, Cincinnati, OH 45221, USA;2. Energy Systems Division, Argonne National Laboratory, Argonne, IL 60439, USA;3. Nanoscience and Technology Division, Argonne National Laboratory, Argonne, IL 60439, USA;1. Department of Mechanical Engineering, Changwon National University, Changwon 641773, South Korea;2. Surface and Nanoscience Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102, India;3. Materials Synthesis and Structural Characterization Division, Physical Metallurgy Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102, India;4. Department of Physics, National Institute of Technology, Tiruchirappalli 620015, India;5. Centre for Nanoscience and Nanotechnology, Sathyabama University, Chennai 600119, India;6. Department of Nanomechatronics Engineering, Pusan National University, Miryang-si 627706, South Korea
Abstract:Ba0.3Sr0.7TiO3 (BST) thin films were prepared from the sols based on alkaline earth acetates and titanium propoxide in 2-methoxyethanol–acetic acid solvents and deposited on polished alumina substrates by spin coating. The perovskite phase crystallizes upon heating at/above 700 °C. By increasing the annealing temperature from 700 to 900 °C the grain size increases from 40 to 80 nm, due to the increased driving force for crystallization. The annealing time has got only a minor influence on grain size as a consequence of constrained conditions of the film. The dielectric permittivity and tunability (ɛ0 V/ɛ200 V) of BST films, measured at 1 MHz, strongly depend on the grain size, exhibiting the values of 345 and 1.47, and 722 and 1.93 for the films with 40 and 80 nm-sized grains, respectively.
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