Low-threshold (3.2 mA per element) 1.3 μm InGaAsP MQW laserarray on a p-type substrate |
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| Authors: | Yamashita S Oka A Kawano T Tsuchiya T Saitoh K Uomi K Ono Y |
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| Affiliation: | Central Res. Lab., Hitachi Ltd., Tokyo; |
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| Abstract: | A low-threshold 1.3-μm InGaAsP MQW laser array was fabricated on a p-type InP substrate taking compatibility with n/p/n-type laser-driver circuits into account. The laser has a p/n-type current-blocking structure and is made entirely by metal-organic chemical vapor deposition (MOCVD). A 10-channel laser array with a threshold current as low as 3.2±0.2 mA (per element) and a slope efficiency of 0.27±0.01 W/A is obtained |
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