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High-pressure high-temperature synthesis of GaN with melamine as the nitrogen source
Affiliation:1. School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471003, People''s Republic of China;2. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, College of Materials Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, People''s Republic of China;3. School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116023, People''s Republic of China;1. Department of Information Technology, Kao Yuan University, Kaohsiung 82151, Taiwan;2. Institute of Computer and Communication Engineering, National Cheng Kung University, Tainan 70101, Taiwan;1. Department of Physics Education and Physics, RCDAMP, Pusan National University, Busan 609-735, Republic of Korea;2. Department of Cogno-mechatronics and Nanofusion, Pusan National University, Busan 609-735, Republic of Korea;3. College of Liberal Arts and Sciences, Anyang University, Gyeonggi-do 430-714, Republic of Korea;4. Nano-Photonics Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea;5. Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, United Kingdom
Abstract:Micron-sized grains of gallium nitride (GaN) crystallizing in the Wurtzite phase were synthesized through a chemical reaction between gallium (Ga) metal and melamine (C3N6H6). The reaction occurred at the temperature range from 1073 to 1473 K and the pressure range from 3.5 to 5.5 GPa. X-ray diffraction (XRD) and transmission electron microscopy (TEM) investigations showed that the final black products mainly contained the clusters of tiny GaN crystals. Prism-like well-shaped single crystals were found in the TEM micrographs. A vapor–liquid–solid growth process was proposed to explain the growth mechanism of GaN in which the pyrolysis of melamine was responsible for the provision of reactive nitrogen.
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