Gas sensing properties of ZnO thin films prepared by microcontact printing |
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| Affiliation: | 1. Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul 130-650, South Korea;2. Department of Materials Engineering, Daelim College of Technology, Anyang 431-715, South Korea;1. Nanophotonics and Applications (NPA) Lab, Department of Physics, Faculty of Science, Beni-Suef University, Beni-Suef 62514, Egypt;2. Department of Physics, Faculty of Science, Fayoum University, Fayoum 63514, Egypt;3. Department of Physics, Faculty of Science, Northern Border University, Arar 91431, Kingdom of Saudia Arabia;1. Quantum-Functional Semiconductor Research Center, Dongguk University - Seoul, Seoul 04623, Republic of Korea;2. Department of Semiconductor Science, Dongguk University - Seoul, Seoul 04623, Republic of Korea;1. School of Optical and Electrical Engineering, Changchun University of Science and Technology, 7186 Weixing Road, Changchun, Jilin 130022, China;2. Chongqing Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China;3. School of Electronics and Information, Northwestern Polytechnical University, Xi’an 710129, China;4. The Key Laboratory of InFiber Integrated Optics, Ministry Education of China, Harbin Engineering University, Harbin 150001, China;5. School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Ave., 639798, Singapore;1. Beijing Engineering Research Center for Mixed Reality and Advanced Display Technology, School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China;2. Department of Information and Computational Science, School of Science, Beijing University of Civil Engineering and Architecture, Beijing 100044, China;3. Chongqing BOE Display Technology Co., Ltd., Chongqing 400714, China;4. Key Laboratory for Optical Measurement and Thin Films of Shaanxi Province, School of Optoelectronic Engineering, Xi''an Technological University, Xi''an 710032, China |
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| Abstract: | In situ patterned zinc oxide (ZnO) thin films were prepared by precipitation of Zn(NO3)2/urea aqueous solution and by microcontact printing of self-assembled monolayers (SAMs) on Al/SiO2/Si substrates. The visible precipitation of Zn(OH)2 from the urea containing Zn(NO3)2 solution was enhanced by increasing the reaction temperature and the amount of urea. The optimized condition for the ZnO thin films was found to be the Zn(NO3)2/urea ratio of 1/8, the precipitation temperature of 80 °C, the precipitation time of 1 h and the annealing temperature of 600 °C, respectively. SAMs are formed by exposing Al/SiO2/Si to solutions comprising of hydrophobic octadecylphosphonic acid (OPA) in tetrahydrofuran and hydrophilic 2-carboxylethylphosphonic acid (CPA) in ethanol. The ZnO thin film was then patterned with the heat treatment of Zn(OH)2 precipitated on the surface of hydrophilic CPA. The ZnO gas sensor was exposed to different concentrations of C3H8 (5000 ppm), CO (250 ppm) and NO (1000 ppm) at elevated temperatures to evaluate the gas sensitivity of ZnO sensors. The optimum operating temperatures of C3H8, CO and NO gases showing the highest gas sensitivity were determined to be 350, 400 and 200 °C, respectively. |
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