H2 sensing characteristics of highly textured Pd-doped SnO2 thin films

The effects of the crystallographic orientation on the H₂ gas sensing properties were investigated in highly oriented polycrystalline Pd-doped SnO₂ films, which were obtained using rf magnetron sputtering of a Pd (0.5 wt%)-SnO₂ target on various substrates (a-, m-, r-, and c-cut sapphire and quartz). All the films had a similar thickness (110 nm), root-mean-square (rms) roughness (1.3 nm), surface area, and chemical status (O, Sn, and Pd). However, the orientation of the films was strongly affected by the orientation of the substrates. The (1 0 1), (0 0 2), and (1 0 1) oriented films were grown on (a-cut), (m-cut), and (r-cut) Al₂O₃ substrates, respectively, and rather randomly oriented films were deposited on (0 0 0 1) (c-cut) Al₂O₃ and quartz substrates. In addition, the oriented Pd-doped SnO₂ films were highly textured and had in-plane orientation relationships with the substrates similar to the epitaxial films. The (1 0 1) Pd-doped SnO₂ films on and Al₂O₃ showed a considerably higher H₂ sensitivity, and their gas response decreased with increasing sensing temperature (400–550 °C). The films deposited on and (0 0 0 1) Al₂O₃ showed the maximum sensitivity at 500 °C. The comparison of the H₂ gas response between undoped and Pd-doped SnO₂ films revealed that the Pd-doping shifted the optimum sensing temperature to a lower value instead of improving the gas sensitivity.