| 脉冲应力下电流密度指数因子的研究与分析 |
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| 引用本文： | 孙英华 郭伟玲. 脉冲应力下电流密度指数因子的研究与分析[J]. 半导体技术, 1998, 23(6): 19-22,49 |
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| 作者姓名： | 孙英华 郭伟玲 |
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| 作者单位： | 北京工业大学电子工程系 |
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| 摘 要： | 介绍了一种与传统ＭＴＦ法完全不同的测量电流密度因子ｎ的新型动态电流斜坡测试法。测试了４种不同样品。结果表明，ｎ值与材料有关，并符合ＢＬＡＣＫ方程。
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| 关 键 词： | 金属化布线 可靠性 电迁徒 VLSI |
Study on Current Density Exponent Under DC Pulse Stress |
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| Sun Yinghua,Guo weiling,Li Zhiguo,Zhang Wanrong,Cheng Yaohai,Ji Yuan. Study on Current Density Exponent Under DC Pulse Stress[J]. Semiconductor Technology, 1998, 23(6): 19-22,49 |
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| Authors: | Sun Yinghua Guo weiling Li Zhiguo Zhang Wanrong Cheng Yaohai Ji Yuan |
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| Abstract: | In this paper,a new dynamic current ramp method is different from the conventional MTF developed for testing the exponent n.The n of four samples have been measured,the results proved the values of n are dependent on materials and agree well with the BLACK equation. |
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| Keywords: | Semiconductor device Reliability Electromigration |
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