A 4.69-W/mm output power density InAIN/GaN HEMT grown on sapphire substrate

We report high performance InAlN/GaN HEMTs grown on sapphire substrates.The lattice-matched InAlN/GaN HEMT sample showed a high 2DEG mobility of 1210 cm2/(V.s)under a sheet density of 2.6 ×1013 cm-2.Large signal load-pull measurements for a(2 × 100 μm)× 0.25 μm device have been conducted with a drain voltage of 24 V at 10 GHz.The presented results confirm the high performances reachable by InAlN-based technology with an output power density of 4.69 W/mm,a linear gain of 11.8 dB and a peak power-added efficiency of 48％.This is the first report of high performance InA1N/GaN HEMTs in mainland China.