| 碳热还原法制备氮化硅粉体的反应过程分析 |
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| 引用本文： | 李虹,黄莉萍.碳热还原法制备氮化硅粉体的反应过程分析[J].无机材料学报,1996,11(2):241-246. |
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| 作者姓名： | 李虹 黄莉萍 |
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| 作者单位： | 中国科学院上海硅酸盐研究所 |
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| 摘 要： | 对以碳热还原法制备氮化硅粉体的ＳｉＯ２－Ｃ－Ｎ２系统进行化学反应热力学和动力学的分析，从而发现在氮气氛不足的条件下，这一系统的反应产物将由氮化硅变为碳化硅；在氮气充足的情况下，随着温度的升高，生成物中碳化硅的量也会逐步增加，这一分析结果通过实验得到了验证。
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| 关 键 词： | 碳热还原 碳化硅 粉体 氮化硅陶瓷 |
Reaction Analysis of Preparation of Si_3N_4 Powder by Carbothermic Method |
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| Li Hong,Huang Liping,Jiang Xin.Reaction Analysis of Preparation of Si_3N_4 Powder by Carbothermic Method[J].Journal of Inorganic Materials,1996,11(2):241-246. |
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| Authors: | Li Hong Huang Liping Jiang Xin |
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| Abstract: | The thermodynamics and kinetics of SiO-C-N2 system used in preparing silicon nitride powder were analyzed. It showed that when nitrogen flow was not enough, the product of this system changed into silicon carbide; on the other hand, when nitrogen flow was enough, with the raising of temperature, the content of silicon carbide in product increased. |
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| Keywords: | carbothermal silicon nitride silicon carbide powder |
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