Synthesis of PbTiO3 film on LaNiO3-coated substrate by the spray-ICP technique

In an attempt to utilize LaNiO₃ as a bottom electrode for PbTiO₃ ferroelectric film, PbTiO₃ and LaNiO₃ films were prepared by the spray-ICP technique under atmospheric pressure. The dense LaNiO₃ films crystallized with preferred (1 1 1) and (1 0 0) orientations on sapphire (0 0 1) and MgO (1 0 0), respectively. Resistivities of the LaNiO₃ films deposited above 600 °C were about 4 × 10^–6 m. The PbTiO₃ film with preferred (001) orientation was successfully prepared on LaNiO₃-coated MgO (1 0 0). Its dielectric constant and dissipation factor were about 200 and 0.02, respectively, at 1 kHz. The Curie temperature suggested that PbTiO₃ films were free from contamination by LaNiO₃.