|
|||||
|
|
| Al2O3缓冲层对以ZnO∶Al为阳极的有机电致发光器件性能的影响 | |
| 引用本文： | 姚宁,邢宏伟,穆慧慧,崔娜娜,葛亚爽,王英俭,张兵临.Al2O3缓冲层对以ZnO∶Al为阳极的有机电致发光器件性能的影响[J].真空科学与技术学报,2011,31(2):144-148. |
| 作者姓名： | 姚宁 邢宏伟 穆慧慧 崔娜娜 葛亚爽 王英俭 张兵临 |
| 作者单位： | 1. 中国科学院安徽光学精密机械研究所,合肥,230031;郑州大学物理工程学院材料物理教育部重点实验室,郑州,450052 2. 郑州大学物理工程学院材料物理教育部重点实验室,郑州,450052 3. 中国科学院安徽光学精密机械研究所,合肥,230031 |
| 摘 要： | 采用直流磁控溅射法制备ZnO∶Al(AZO)透明导电薄膜,薄膜电阻率为5.3×10-4Ω.cm,可见光区平均透过率大于85%。采用施加缓冲层的方法,在AZO和NPB之间加入一层Al2O3绝缘薄膜,提高了AZO阳极有机电致发光器件的性能,分析了Al2O3缓冲层的作用机理。结果表明施加1.5 nm缓冲层后器件的电流效率是单纯AZO阳极器件的3.4倍,同时也高于传统ITO器件。 |
| 关 键 词： | 掺铝氧化锌 缓冲层 Al2O3 有机电致发光器件 |
Al2O3 Buffer Layers and Characteristics of Organic Light Emitting Devices Made of Al-Doped ZnO Films |
|
| Yao Ning,Xing Hongwei,Mu Huihui,Cui Nana,Ge Yashuang,Wang Yingjian,Zhang Binglin.Al2O3 Buffer Layers and Characteristics of Organic Light Emitting Devices Made of Al-Doped ZnO Films[J].JOurnal of Vacuum Science and Technology,2011,31(2):144-148. | |
| Authors: | Yao Ning Xing Hongwei Mu Huihui Cui Nana Ge Yashuang Wang Yingjian Zhang Binglin |
| Affiliation: | Yao Ning1,2,Xing Hongwei2,Mu Huihui2,Cui Nana2,Ge Yashuang2,Wang Yingjian1,Zhang Binglin2(1.Anhui Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Hefei 230031,China,2.Key Laboratory of Material Physics,Ministry of Education,Department of Physics,Zhengzhou University,Zhengzhou 450052,China) |
| Abstract: | |
| Keywords: | Al-doped ZnO Buffer layer Al2O3 Organic light-emitting diodes |
| 本文献已被 CNKI 万方数据 等数据库收录！ | |