| 基于SOI材料制造新型磁敏三极管 |
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| 引用本文： | 曹体锋.基于SOI材料制造新型磁敏三极管[J].哈尔滨轴承,2007,28(2):61-62. |
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| 作者姓名： | 曹体锋 |
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| 作者单位： | 哈尔滨威克科技股份有限公司,黑龙江,哈尔滨,150090 |
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| 摘 要： | 阐述了基于SOI材料制造新型磁敏三极管的设计原理和制造工艺。构成新型磁敏三极管的复合区采用MEMS中的各向异性腐蚀技术进行设置,给出了这种复合区的复合机理。实验结果表明,此种三极管具有磁灵敏度高、噪声低和可靠性高的特点。
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| 关 键 词： | SOI 磁敏三极管 低噪声 MEMS 各向异性腐蚀 |
| 文章编号： | 1672-4852（2007）02-0061-02 |
| 修稿时间： | 2007-03-15 |
Manufacturing new type of magnetic sensitivity transistor on SOI |
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| CAO Ti-feng.Manufacturing new type of magnetic sensitivity transistor on SOI[J].JOurnal of Harbin Bearing,2007,28(2):61-62. |
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| Authors: | CAO Ti-feng |
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| Affiliation: | Harbin VEIC Technology Co.,Ltd., Harbin 150090, China |
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| Abstract: | New type of magnetic sensitivity transistor is based on SOl, whose design principle and process are expatiated, and whose recombination region is set by anisotropic etching technology in MEMS. At the same time, the recombination mechanism of recombination region is given. The result of experiment shows that this kind of transistor is provided with high magnetic sensitivity, low noise, and high reliability. |
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| Keywords: | SOI magnetic sensitivity transistor low noise MEMS anisotropic etching |
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