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Field-effect transistors based on poly(3-hexylthiophene): Effect of impurities
Affiliation:1. Université Bordeaux 1, Laboratoire de l’Intégration, du Matériau au Système (IMS), CNRS (UMR 5218), Site ENSCPB, 16 avenue Pey Berland, 33607 Pessac Cedex, France;2. Université Bordeaux 1, Laboratoire de Chimie des Polymères Organiques (LCPO), CNRS (UMR 5629), ENSCPB, 16 avenue Pey Berland, 33607 Pessac Cedex, France;1. Department of Physics, Faculty of Sciences, University of Atatürk, 25240 Erzurum, Turkey;2. Department of Bioengineering, Faculty of Engineering and Architecture, Kafkas University, Turkey;3. Department of Chemistry, Faculty of Sciences, University of Atatürk, 25240 Erzurum, Turkey;4. Physics Engineering Department, Faculty of Science, Istanbul Medeniyet University, Istanbul 34100, Turkey;1. Center for Nano Science and Technology @PoliMi, Istituto Italiano di Tecnologia, via Pascoli 70/3, 20133 Milano, Italy;2. MOX Modeling and Scientific Computing, Dipartimento di Matematica, Politecnico di Milano, Piazza L. da Vinci 32, 20133 Milano, Italy;3. CEN Centro Europeo di Nanomedicina, Piazza L. da Vinci 32, 20133 Milano, Italy;4. Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Piazza L. da Vinci 32, 20133 Milano, Italy;1. University “Politehnica”of Bucharest, Faculty of Applied Chemistry and Material Science, Department of Oxide Materials and Nanomaterials, No. 1-7 Gh. Polizu Street, 011061 Bucharest, Romania;2. National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Street, P.O. Box MG-36 077125 Magurele, Romania;3. National Institute of Materials Physics, Atomistilor Str., No. 405A PO Box MG7, 077125, Magurele, Romania;1. Department of Internal Medicine, Cleveland Clinic Foundation, Cleveland, Ohio;2. Department of Cardiovascular Medicine, Cleveland Clinic Foundation, Cleveland, Ohio;1. Department of Chemistry Education, Chonnam National University, Yongbong-ro 77, Yongbong-dong, Gwangju 500-757, Republic of Korea;2. Department of Advanced Chemicals and Engineering, Chonnam National University, Yongbong-ro 77, Yongbong-dong, Gwangju 500-757, Republic of Korea;3. Department of Chemistry, Chonnam National University, Yongbong-ro 77, Yongbong-dong, Gwangju 500-757, Republic of Korea;4. School of Chemical Engineering, Yeungnam University, Gyeongsan 712-749, Republic of Korea;5. Department of Chemical Engineering, Chonnam National University, Gwangju 61186, Republic of Korea
Abstract:Organic field-effect transistors (OFETs) based on regioregular poly(3-hexylthiophene)s (P3HT)s have been studied as a function of the amount of impurities in the active polymer. P3HTs have been synthesized via a nickel-initiated cross-coupling polymerization and successively purified by a series of Soxhlet extractions with methanol, hexane and chloroform. At each stage, the amount of impurities was quantified by means of 1H nuclear magnetic resonance (NMR) spectroscopy, Rutherford backscattering spectroscopy (RBS) and particle induced X-ray emissions (PIXE). Traces of Ni, Cl, Mg, Ca, Fe and Zn could be detected in non-fully purified P3HTs. The presence of impurities in the different fractions of P3HT is shown to affect not only the characteristics of the OFETs but also the photovoltaic performances.
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