Theory and application of charge pumping for the characterizationof Si-SiO2 interface and near-interface oxide traps |
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| Authors: | Paulsen RE White MH |
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| Affiliation: | Dept. of Comput. Sci. & Electr. Eng., Lehigh Univ., Bethlehem, PA; |
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| Abstract: | A generalized charge pumping model has been developed which extends the use of charge pumping from a study of traps at the Si-SiO 2 interface to a study of traps in the oxide. The analytical model, based on tunneling theory, allows the spatial distribution of near-interface oxide traps to be determined from variable frequency charge pumping data. Profiling of near-interface oxide traps in irradiated MOSFET's as well as SONOS nonvolatile memory devices is presented |
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