| 氧化钒薄膜成分及价态的深度刻蚀分析 |
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| 引用本文： | 魏雄邦,蒋亚东,吴志明,廖家轩,贾宇明,田忠.氧化钒薄膜成分及价态的深度刻蚀分析[J].材料导报,2009,23(22). |
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| 作者姓名： | 魏雄邦 蒋亚东 吴志明 廖家轩 贾宇明 田忠 |
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| 作者单位： | 1. 电子科技大学电子科学技术研究院,成都,610054
2. 电子科技大学光电信息学院电子薄膜与集成器件国家重点实验室,成都,610054 |
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| 基金项目： | 电子科技大学校青年科学基金，教育部新世纪优秀人才支持计划 |
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| 摘 要： | 采用直流反应磁控溅射法制备了厚度为500nm的氧化钒薄膜.采用X射线光电子能谱仪对制得的氧化钒薄膜进行了深度刻蚀分析.结果表明,随薄膜刻蚀深度的增加,薄膜内的氧钒比及钒离子价态发生了递变,当薄膜刻蚀深度小于80nm时,这一递变趋势尤为明显.认为这与氧化钒薄膜中各价态钒氧化合物的稳定性和薄膜的制备工艺密切相关.
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| 关 键 词： | 氧化钒薄膜 深度刻蚀 成分 价态 |
Deep-scan Analysis of Composition and Valence of Vanadium Oxide Thin Film |
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| WEI Xiongbang,JIANG Yadong,WU Zhiming,LIAO Jiaxuan,JIA Yuming,TIAN Zhong.Deep-scan Analysis of Composition and Valence of Vanadium Oxide Thin Film[J].Materials Review,2009,23(22). |
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| Authors: | WEI Xiongbang JIANG Yadong WU Zhiming LIAO Jiaxuan JIA Yuming TIAN Zhong |
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| Affiliation: | WEI Xiongbang1,JIANG Yadong2,WU Zhiming2,LIAO Jiaxuan1,JIA Yuming1,TIAN Zhong1(1 Research Institute of Electronic Science and Technology,University of Electronic Science and Technology of China,Chengdu600154,2 State Key Laboratory of Electronic Thin Films and Integrated Devices,School of Optoelectronic Information,Chengdu 600154) |
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| Abstract: | Vanadium oxide thin film with the thickness of 500nm is prepared. Deep-scan analysis of composition and valence of the film is made. The deep-scan analysis reveal that with scan depth increasing, the O/V ratio and the vanadium valence of the film changes gradiently, especially within scan depth of 80nm. It is believed that the phenomena above are correlated with the stability of the vanadium oxides and the preparing technology. |
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| Keywords: | vanadium oxide thin film deep-scan composition valence |
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