| TFT AMLCD像素矩阵电路中栅延迟的模拟研究 |
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| 引用本文： | 李牧菊,杨柏梁,朱永福,刘传珍,袁剑峰,吴渊,廖燕平.TFT AMLCD像素矩阵电路中栅延迟的模拟研究[J].液晶与显示,1999,14(2):121-125. |
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| 作者姓名： | 李牧菊 杨柏梁 朱永福 刘传珍 袁剑峰 吴渊 廖燕平 |
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| 作者单位： | 中国科学院长春物理研究所,北方液晶工程研究开发中心,长春,130021 |
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| 基金项目： | 中国科学院院长基金,中国科学院留学归国基金 |
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| 摘 要： | 建立了ａ－ＳｉＴＦＴＡＭＬＣＤ的等效电路模型，综合考虑栅信号线电阻、栅与源信号线的交叠电容以及ＴＦＴ导电沟道电容构成的ＲＣ（ＲｅｓｉｓｔｉｖｉｔｙＣａｐａｃｉｔａｎｃｅ）常数，模拟计算了栅信号延迟对液晶显示屏尺寸、显示分辨率及栅信号电极材料的依赖关系，为实现器件优化设计提供参考。
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| 关 键 词： | 栅电极电阻 交叠电容 沟道电容 信号延迟 RC常数 |
Simulation of Gate Delay for Inverted Staggered a-Si TFT AMLCD |
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| Li Muju,Yan Bailiang,Zhu Yongfu,Liu Chuanzhen,Yuan Jianfeng,Wu Yuan,Liao Yanping.Simulation of Gate Delay for Inverted Staggered a-Si TFT AMLCD[J].Chinese Journal of Liquid Crystals and Displays,1999,14(2):121-125. |
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| Authors: | Li Muju Yan Bailiang Zhu Yongfu Liu Chuanzhen Yuan Jianfeng Wu Yuan Liao Yanping |
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| Abstract: | An equivalent RC circuit of unit pixel was developed for the simulation of gate delay in a Si TFT AMLCD in order to optimize the designment of devices The RC factor is supposed to be contributed by the resistance of gate line,the crossover capacitance and the channel capacitance The simulation presents the gate delay as a function of diagonal size and display resolution, regarding gate electrode made from various metal materials |
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| Keywords: | gate line resistance crossover capacitance signal delay channel capacitance |
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