Negative differential resistance of AlGaAs/GaAs heterojunctionbipolar transistors: influence of emitter edge current |
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| Authors: | Waldrop J.R. Chang M.F. |
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| Affiliation: | Sci. Center, Rockwell Int. Corp., Thousand Oaks, CA; |
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| Abstract: | We report an electrical characterisation of AlGaAs/GaAs heterojunction bipolar transistors over a temperature range of 250 to 400 K in which the emitter edge current contribution to the negative differential output resistance (NDR) effect is determined. A quantitative analysis of the DC gain versus temperature and perimeter to area ratio indicates that emitter edge current has a major influence on the NDR magnitude |
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