| 纳米氮化硅粉体材料的ICP制备技术及TEM分析 |
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| 引用本文： | 赵文锋,陈俊芳,宋淑然,许利霞,薛秀云. 纳米氮化硅粉体材料的ICP制备技术及TEM分析[J]. 山东陶瓷, 2005, 28(3): 3-5 |
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| 作者姓名： | 赵文锋 陈俊芳 宋淑然 许利霞 薛秀云 |
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| 作者单位： | 华南农业大学工程学院,广州,510642;华南师范大学物理与电信工程学院,广州,510631 |
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| 摘 要： | 用硅烷和氮气为反应气体，采用ICP等离子体化学气相沉积技术合成氮化硅纳米粉体。用朗缪尔探针诊断了反应室内等离子体参数，得到不同位置、不同功率下等离子体密度的变化规律，等离子体密度随着功率的增大而增大，由于离子鞘层的存在，提供了局部等离子体密度稳定的区域。利用TEM分析了纳米氮化硅的显微形貌，结果表明：纳米氮化硅粉体颗粒为球形，分布于20～40nm。
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| 关 键 词： | ICP 氮化硅 纳米粉 |
| 文章编号： | 1005-0639(2005)03-0003-03 |
| 修稿时间： | 2005-03-09 |
Investigation on the TEM Properties of Si3N4 Nanopowder Prepared by ICP |
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| ZHAO Wen-feng,CHEN Jun-fang,SONG shu-ran,XU Li-xia,XUE Xiu-yun. Investigation on the TEM Properties of Si3N4 Nanopowder Prepared by ICP[J]. Shandong Ceramics, 2005, 28(3): 3-5 |
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| Authors: | ZHAO Wen-feng CHEN Jun-fang SONG shu-ran XU Li-xia XUE Xiu-yun |
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| Affiliation: | ZHAO wen-feng1,CHEN jun-fang2,SONG shu-ran1,XU li-xia1,XUE xiu-yun1 |
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| Abstract: | The Si_3N_4 nanopowder was prepared by means of ICPECVD by decomposing of SiH_4 and N_2.The ion density in the reaction chamber was diagnosed by a Langmuir probe.The rules were obtained under different radio frequency power and different position which the ion density increases as the power decreases.Because of the ion sheath,the area emerges where the ion density is symmetrical.Analysis by TEM reveals characteristic of Si_3N_4.The results indicate the particles is spherical with diameters from 20nm to 40nm. |
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| Keywords: | ICP Si_3N_4 Nanopowder |
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