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Low threshold and low dispersion MOCVD/LPE buried-heterostructure GaAs/GaAlAs lasers |
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| Authors: | Brillouet F. Riou J. Trotte M. Azoulay R. Dugrand L. |
| Affiliation: | Centre National d'études des Télécommunications, Laboratoire de Bagneux, Bagneux, France; |
| Abstract: | We report on the first MOCVD/LPE buried-heterostructure lasers realised using a simple LPE burying process, leading to low thresholds and little dispersion in device characteristics. |
| Keywords: | |