Characterization of interface degradation in deep submicron MOSFETs by gate-controlled-diode measurement

The gate-controlled-diode (GCD) characteristic of a deep submicron MOSFET is changed dramatically following a Fowler-Nordheim (FN) injection. The changes can be explained by the trap generation on the Si surface close to the channel/drain edge and the interface trap generation in the channel region. By examining the change in the reverse drain current under accumulation and inversion in the GCD measurements, the information of trap generation in the surface region close to the channel/drain edge is obtained (note that the trap generation in this region could be different from that in other interface regions); and by measuring the reverse drain current under depletion, the interface trap generation in the channel region is obtained.