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In-situ cleaning and passivation of oxidized Cu surfaces by alkanethiols and its application to wire bonding
Authors:Caroline M. Whelan  Michael Kinsella  Hong Meng Ho  Karen Maex
Affiliation:(1) IMEC, B-3001 Leuven, Belgium;(2) Department of Electrical Engineering, Katholieke Universiteit Leuven, B-3001 Heverlee, Belgium;(3) Department of Chemistry, Trinity College, Dublin 2, Ireland;(4) Present address: Engineering Division, Kulicke & Soffa Pte Ltd., 554910 Singapore
Abstract:
The treatment of oxidized Cu surfaces using an alkanethiol as a reducing agent has been investigated. Exposure to a dilute solution of 1-decanethiol resulted in the complete removal and/or conversion of CuO and subsequent formation of a passivating thiolate film, a so-called self-assembled monolayer (SAM), on the underlying Cu/Cu2O surface as evidenced by x-ray photoelectron spectroscopy (XPS) analysis. Morphological changes, monitored by scanning electron microscopy (SEM) and atomic force microscopy (AFM), revealed transformation of the rough, porous CuO layer into a comparatively smooth Cu/Cu2O surface. Experiments performed on integrated circuit back-end-of-line (BEOL) die structures, comprising Cu/SiO2 bond pads used as substrates for Cu wire bonding, demonstrate the potential application of a thiol-based in-situ cleaning-passivation procedure in microelectronics.
Keywords:Cu/Cu2O  in-situ cleaning and passivation  alkanethiol  wire bonding
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