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RF集成电感的设计与寄生效应分析
引用本文:李力南,钱鹤. RF集成电感的设计与寄生效应分析[J]. 固体电子学研究与进展, 2002, 22(2): 153-157
作者姓名:李力南  钱鹤
作者单位:中国科学院微电子中心,北京,100029;中国科学院微电子中心,北京,100029
摘    要:分析了体硅 CMOS RF集成电路中电感的寄生效应 ,以及版图参数对电感品质因数 Q的影响 ,并通过Matlab程序模拟了在衬底电阻、金属条厚度、氧化层厚度改变时电感品质因数的变化 ,分析了不同应用频率时版图参数在寄生效应中所起的作用 ,得出了几条实用的设计原则并进行了实验验证 ,实验结果与模拟值符合得很好 ,表明此模拟方法与所得结论均可有效地用于指导射频 (RF)集成电路中集成电感的设计

关 键 词:射频  集成电感  品质因数
文章编号:1000-3819(2002)02-153-05
修稿时间:2000-06-12

RF Integrated Inductor Designing and Parasitic Effects Analyzing
LI Linan QIAN He. RF Integrated Inductor Designing and Parasitic Effects Analyzing[J]. Research & Progress of Solid State Electronics, 2002, 22(2): 153-157
Authors:LI Linan QIAN He
Abstract:This paper analyzes the parasitic effect of an integrated inductor in CMOS RF IC and the effect of the layout parameter on inductors quality factor Q . By using the Matlab program the changing of quality factor with various resistivities of substrate, and thicknesses of the metal film and oxide is simulated. Also it analyzes the effect of various layout parameters in various application frequencies. In this paper several principles have been provided and confirmed by experiment.The results have a good agreement with the simulation result which indicating that this method and principles can be used as some guidelines on designing integrated inductor in CMOS RF IC.
Keywords:radio frequency  integrated inductor  Q factor
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