1kW宽带线性SiC功率放大器设计

简述了SiC宽禁带半导体材料的特性,通过与传统Si半导体材料相比较,该材料在击穿电场强度、截止频率、热传导率、抗辐射能力、结温和热稳定性等方面具有明显优势。SiC宽禁带功率器件在输出功率、功率密度、工作频率、环境适应性等方面具有卓越的性能,在雷达发射机中有良好的应用前景。文中利用SiC宽禁带功率器件设计制作了L波段1 kW功率放大器,对SiC宽禁带功率放大器进行了性能测试,根据实验数据分析了SiC宽禁带功率器件对固态雷达发射机性能的改善。

Design of 1 kW Wideband Linear SiC Power Amplier

The features of SiC wide bandgap semiconductor(WBGS) materials are depicted briefly.Compared with traditional Si semiconductors,the WBGS have more obvious advantages in breakdown electric field intensity,cut-off frequency,thermal conductivity,anti-radiation ability,junction temperature and heat stability.SiC WBG power devices have prominent performances on out-put power,power density,operating frequency,environment adaptability,and so on,so they have good application prospects in radar transmitters.Based on...