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Indium bump array fabrication on small CMOS circuit for flip-chip bonding
Authors:Huang Yuyang  Zhang Yuxiang  Yin Zhizhen  Cui Guoxin  Liu H C  Bian Lifeng  Yang Hui  Zhang Yaohui
Affiliation:1. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China
2. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China;Institute for Microstructural Sciences, National Research Council, Ottawa K1A 0R6, Canada
Abstract:We demonstrate a novel method for indium bump fabrication on a small CMOS circuit chip that is to be flip-chip bonded with a GaAs/AlGaAs multiple quantum well spatial light modulator.A chip holder with a via hole is used to coat the photoresist for indium bump lift-off.The 1000 μm-wide photoresist edge bead around the circuit chip can be reduced to less than 500μm,which ensures the integrity of the indium bump array.64 × 64 indium arrays with 20 μm-high,30 μm-diameter bumps are successfully formed on a 5 × 6.5 mm2 CMOS chip.
Keywords:flip-chip bonding  indium bump  array  small-size  
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