Effect of copper slurry on polishing characteristics |
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| Authors: | Hu Yi Liu Yuling Liu Xiaoyan Wang Liran He Yangang |
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| Affiliation: | Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China |
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| Abstract: | The composition of the polishing solution is optimized by investigating the impact of the WIWNU (the so-called within-wafer-non-uniformity WIWNU) and the removal rate(RR) on the polishing characteristics of copper.The oxidizer concentration is 1 Vol%;the abrasive concentration is 0.8 Vol%;the chelating agent of the solution is 2 Vol%.The working pressure is 1 kPa.The defect on the surface is degraded and the surface is clean after polishing.The removal rate is 289 nm/min and the WIWNU is 0.065.The surface r... |
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| Keywords: | copper slurry chemical mechanical planarization WIWNU |
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