| 利用大周期光子晶体结构增强InAs/GaAs量子点的激发态发光 |
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| 引用本文： | 秦璐,徐波,许兴胜.利用大周期光子晶体结构增强InAs/GaAs量子点的激发态发光[J].红外与毫米波学报,2019,38(5):559-565. |
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| 作者姓名： | 秦璐 徐波 许兴胜 |
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| 作者单位： | 中国科学院半导体研究所集成光电子学国家重点实验室,北京100083;中国科学院大学材料光电研究中心,北京1001408;中国科学院大学材料光电研究中心,北京1001408;中国科学院半导体研究所材料重点实验室,北京100083 |
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| 基金项目： | National Key Research and Development Program of China 2016YFA0301200 D171100004817002;the National Natural Science Foundation of China 61575191 61627820 61875252Supported by National Key Research and Development Program of China （2016YFA0301200）, the Beijing Science and Technology Project no.D171100004817002, and the National Natural Science Foundation of China （61575191, 61627820, 61875252） |
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| 摘 要： | 在该研究中，通过激光全息和湿法腐蚀的方法在InAs/GaAs量子点材料上制备光子晶体，研究了由激光二极管激发制备了光子晶体的InAs / GaAs量子点材料的光致发光光谱.发现具有光子晶体的量子点材料的光谱显示出多峰结构，光子晶体对短波长部分的发光增强和调制比对长波长部分的增强和调制更明显.InAs / GaAs量子点的光致发光光谱通过刻蚀形成的光子晶体结构得到了调控，并且量子点的激发态发光得到了明显增强.
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| 关 键 词： | 量子点 光子晶体 激光全息曝光 光致发光光谱 |
| 收稿时间： | 2019/3/19 0:00:00 |
| 修稿时间： | 2019/7/7 0:00:00 |
Enhancement of excited-state emission of InAs/GaAs quantum dots with large-period photonic crystal |
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| QIN Lu,XU Bo and XU Xing-Sheng.Enhancement of excited-state emission of InAs/GaAs quantum dots with large-period photonic crystal[J].Journal of Infrared and Millimeter Waves,2019,38(5):559-565. |
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| Authors: | QIN Lu XU Bo and XU Xing-Sheng |
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| Affiliation: | State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083,China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 101408, China,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 101408, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China,State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083,China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 101408, China |
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| Abstract: | In this study, the photoluminescence spectra of InAs/GaAs quantum dots material with photonic crystals were investigated by laser diode excitation. The photonic crystals were fabricated in the material of InAs/GaAs quantum dots by laser holography and wet etching method. It was found that the spectra from quantum dots with photonic crystals appeared multi-peak structure; the enhancement and modification to the short-wavelength component were more pronounced than those to the long-wavelength components. The photoluminescence from InAs/GaAs quantum dots was modified by photonic crystals, and the emission from excited states was significantly enhanced. |
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| Keywords: | quantum dots photonic crystal laser holography photoluminescence spectra |
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