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Record power characteristics of InGaAs/AlGaAs/GaAs heterostructure lasers
Authors:D. A. Livshits  A. Yu. Egorov  I. V. Kochnev  V. A. Kapitonov  V. M. Lantratov  N. N. Ledentsov  T. A. Nalyot  I. S. Tarasov
Affiliation:(1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia
Abstract:
Continuous-wave output powers of 9.2 W at a constant heatsink temperature of 10°C and 12.2 W at a stabilized temperature of the active region have been obtained on an InGaAs/AlGaAs laser with a 0.4-µm-thick waveguide, operating at 1.03 µm. Record-breaking output mirror power densities of, respectively, 29.9 and 40 MW/cm2 have been achieved without catastrophic optical mirror damage in the two temperature-stabilization regimes. A maximum power conversion efficiency of 66% has been achieved in a laser with a cavity length of 2 mm.
Keywords:
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