Record power characteristics of InGaAs/AlGaAs/GaAs heterostructure lasers |
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Authors: | D. A. Livshits A. Yu. Egorov I. V. Kochnev V. A. Kapitonov V. M. Lantratov N. N. Ledentsov T. A. Nalyot I. S. Tarasov |
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Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia |
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Abstract: | ![]() Continuous-wave output powers of 9.2 W at a constant heatsink temperature of 10°C and 12.2 W at a stabilized temperature of the active region have been obtained on an InGaAs/AlGaAs laser with a 0.4-µm-thick waveguide, operating at 1.03 µm. Record-breaking output mirror power densities of, respectively, 29.9 and 40 MW/cm2 have been achieved without catastrophic optical mirror damage in the two temperature-stabilization regimes. A maximum power conversion efficiency of 66% has been achieved in a laser with a cavity length of 2 mm. |
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