Joining of SiCf/SiC using a layered Ti3SiC2-SiCw and TiC gradient filler |
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| Affiliation: | 1. School of Materials Science and Engineering, Yeungnam University, 38541, South Korea;2. Engineering Laboratory of Nuclear Energy Materials, NIMTE, Chinese Academy of Sciences, 315201, China;1. Engineering Laboratory of Advanced Energy Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China;2. School of Materials Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China;1. School of Mechanical Engineering, Sichuan University, Chengdu, 610065, China;2. School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, China;3. School of Mechanical Engineering, Chengdu University, Chengdu, 610065, China;4. State Key Laboratory of Nuclear Fuel and Materials, China Nuclear Power Institute, 610065, China;5. School of Pittsburgh, Sichuan University, Chengdu, 610065, China;1. State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China;2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China;3. State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin, 150001, China;4. School of Material and Engineering, Shanghai University, Shanghai, 200444, China;1. Engineering Laboratory of Advanced Energy Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China;2. Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, China;1. National Research Council, Institute of Condensed Matter Chemistry and Technologies for Energy (CNR-ICMATE), Genoa, Italy;2. Politecnico di Torino, Department of Applied Science and Technology, Corso Duca degli Abruzzi 24, 10129 Torino, Italy;1. School of Engineering & Materials Science and Nanoforce Technology Ltd., Queen Mary University of London, Mile End Road, London E1 4NS, United Kingdom;2. Institute of Physics of Materials, Academy of Sciences of the Czech Republic, ?i?kova 22, 616 62 Brno, Czech Republic;3. Politecnico di Torino, Applied Science and Technology Department, Corso Duca degli Abruzzi 24, 10129 Torino, Italy |
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| Abstract: | A layered filler consisting of Ti3SiC2-SiC whiskers and TiC transition layer was used to join SiCf/SiC. The effects of SiCw reinforcement in Ti3SiC2 filler were examined after joining at 1400 or 1500 °C in terms of the microstructural evolution, joining strength, and oxidation/chemical resistances. The TiC transition layer formed by an in-situ reaction of Ti coating resulted in a decrease in thermal expansion mismatch between SiCf/SiC and Ti3SiC2, revealing a sound joint without cracks formation. However, SiCf/SiC joint without TiC layer showed formation of cracks and low joining strength. The incorporation of SiCw in Ti3SiC2 filler showed an increase in joining strength, oxidation, and chemical etching resistance due to the strengthening effect. The Ti3SiC2 filler containing 10 wt.% SiCw along with the formation of TiC was the optimal condition for joining of SiCf/SiC at 1400 °C, showing the highest joining strength of 198 MPa as well as improved oxidation and chemical resistance. |
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| Keywords: | B Joining D SiC whisker E Mechanical properties |
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