大尺寸硅片自旋转磨削的试验研究

利用基于自旋转磨削原理的硅片超精密磨床，通过试验研究了砂轮粒度、砂轮转速、工件转速及砂轮进给速度等主要因素对材料去除率、砂轮主轴电机电流以及磨削后硅片表面粗糙度的影响关系。研究结果表明，增大砂轮轴向进给速度和减小工件转速，采用粗粒度砂轮有利于提高磨削硅片的材料去除率，砂轮轴向进给速度对材料去除率的影响最为显著；适当增大砂轮转速，减小砂轮轴向进给速度，采用细粒度砂轮可以减小磨削表面粗糙度；在其它条件一定的情况下，砂轮速度超过一定值会导致材料去除率减小，主轴电机电流急剧增大，表面粗糙度变差；采用比#2000粒度更细的砂轮磨削时，材料去除率减小，硅片表面粗糙度没有明显改善。

GRINDING OF LARGE SIZE SILICON WAFER ON A WAFER-ROTATING GRINDING MACHINE

By using a wafer-rotating grinding machine,the influence of the main process factors including grit size of diamond grinding wheel,rotating speed of the wafer chuck table,rotating speed and the down feed rate of the cup grinding wheel on the material removal rate,spindle motor current and wafer surface roughness in grinding large size wafer are experimentally investigated. The results show that,when increasing the feed rate of the grinding wheel,decreasing the rotating speed of the wafer chuck table and using coarser grit grinding wheel,the material removal rate in the wafer rotating grinding increase,the feed rate of the grinding wheel has greater influence on the material removal rate;when suitably increasing the rotating speed of the grinding wheel,decreasing the feed rate of the grinding wheel and using finer grit grinding wheel,the wafer surface roughness can be reduced;there exists a critical rotating speed of the grinding wheel (about 2300rpm),beyond which the material removal rate evidently decreases and the spindle motor current and wafer surface roughness steeply increase;when the grit size of the grinding wheel is finer than #2000, the material removal rate decreases and the wafer surface roughness has no obvious improvement.