The structure and photoluminescence properties of ZnO/SiC multilayer film on Si substrate |
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Authors: | Jin Chenggang Wu Xuemei Zhuge Lanjian and Sha Zhendong |
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Affiliation: | (1) Department of Physics, Suzhou University, Suzhou, 215006, China;(2) The Key Laboratory of Thin Films of Jiangsu, Suzhou University, Suzhou, 215006, China;(3) Analysis and Testing Center, Suzhou University, Suzhou, 215006, China |
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Abstract: | ZnO/SiC multilayer film has been fabricated on a Si (111) substrate with a silicon carbide (SiC) buffer layer using the RF
(radio frequency)-magnetron technique with targets of a ceramic polycrystalline zinc oxide (ZnO) and a composite target of
pure C plate with attached Si chips on the surface. The as-deposited films were annealed at a temperature range of 600–1000°C
under nitrogen atmosphere. The structure and photoluminescence (PL) properties of the samples were measured using X-ray diffractometry
(XRD), Fourier transform infrared (FTIR) spectroscopy and PL spectrophotometry. By increasing the annealing temperature to
800°C, it is found that all the ZnO peaks have the strongest intensities, and the crystallinity of ZnO is more consistent
on the SiC buffer layer. Further increase of the annealing temperature allows the ZnO and SiC layers to penetrate one another,
which makes the interface between ZnO and SiC layer become more and more complicated, thus reduces the crystallinities of
ZnO and SiC. The PL properties of a ZnO/SiC multilayer are investigated in detail. It is discovered that the PL intensities
of these bands reach their maximum after being annealed at 800°C. The PL peaks shift with an increase in the annealing temperature,
which is due to the ZnO and SiC layers penetrating reciprocally. This makes the interface more impacted and complicated, which
induces band structure deformation resulting from lattice deformation. |
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Keywords: | ZnO/SiC multilayer film structure photoluminescence radio-frequency magnetron sputtering technology |
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