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| 基于低频噪声的薄膜电阻器可靠性表征方法 | |
| 引用本文： | 吴勇,马中发,杜磊,何亮.基于低频噪声的薄膜电阻器可靠性表征方法[J].电子科技,2014,27(12):100. |
| 作者姓名： | 吴勇 马中发 杜磊 何亮 |
| 作者单位： | (1.西安电子科技大学 微电子学院,陕西 西安 710071; 2.西安电子科技大学 先进材料与纳米科技学院,陕西 西安 710071) |
| 摘 要： | 薄膜电阻的低频噪声同器件的损伤程度密切相关。文中采用两级低噪声放大器和高速高精度PCI数据采集卡构建的测试系统测量了一组1.5 kΩ镍铬薄膜电阻老化试验前后的低频噪声,结合显微分析发现电迁移是薄膜电阻可靠性退化的主导机制,电迁移损伤发生前后低频噪声的幅值、频率指数和转折频率等参量均会发生异常波动。分析表明,低频噪声能更敏感地反映薄膜电阻的损伤程度,可作为此类器件可靠性无损的筛选依据。 |
| 关 键 词： | 镍铬薄膜电阻器 低频噪声 老化试验 电迁移 可靠性 |
Thin-film Resistor Reliability Characterization Based on Low Frequency Noise |
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| WU Yong,MA Zhongfa,DU Lei,HE Liang.Thin-film Resistor Reliability Characterization Based on Low Frequency Noise[J].Electronic Science and Technology,2014,27(12):100. | |
| Authors: | WU Yong MA Zhongfa DU Lei HE Liang |
| Affiliation: | (1.School of Microelectronics,Xidian University,Xi'an 710071,China; 2.School of Advanced Material and Nano-technology,Xidian University,Xi'an 710071,China) |
| Abstract: | The low-frequency noise of thin-film resistor and its inner defects are closely related.In this paper,the low-frequency noises of a batch of 1.5 kΩ NiCr thin-film resistors both before and after ageing are measured by a testing setup comprised of two-stage low-noise amplifiers and a high speed and high accuracy PCI data acquisition card.Electro-migration inside the thin-film resistor is identified to be the dominant degradation mechanism by a combination analysis of both low-frequency noise and microscopy.The parameters of low-frequency noise such as amplitude,frequency index and turning frequency exhibit unusual fluctuations right before the occurrence of electro-migration.It is concluded that the low-frequency noise of thin-film resistor can sensitively manifest the damages inside the component,and as a result,low-frequency noise can be used as an indicator for non-destructive screening. |
| Keywords: | NiCr thin film resistor low frequency noise ageing test electro migration eliability |
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