p型GaN基器件的欧姆接触

宽带隙的GaN具有优良的物理和化学性质,己成为半导体领域研究的热点之一。p型GaN的欧姆接触问题制约了GaN基器件的进-步发展。本文首先介绍了欧姆接触的原理及评价方法,详细讨论了实现良好的p型GaN欧姆接触的主要方法是采取表面处理技术、选择合适的金属电极材料和进行热退火处理,以及研究进展情况。最后指出目前存在的问题并提出今后的研究方向。

Ohmic Contact of p-GaN Based Devices

Wide band crack GaN with excellent physics and chemical property has becomes one of the semiconductor domain research forces.The p-GaN ohmic contact question has restricted the GaN base devices for further development.This article first introduced the ohmic contact principles and the appraisal methods,then discussed in detail how to realized good p-GaN ohmic contact.The main method are adopts the surface treatment technology,the choice appropriate metal electrode material,carries on hot anneal processing,and the research progresses.Finally pointed out at present exists the question,and will point out the next research direction.