| High-temperature(T = 80℃) operation of a 2μm InGaSb-AlGaAsSb quantum well laser |
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| 引用本文： | 张宇,王永宾,徐应强,徐云,牛智川,宋国峰.High-temperature(T = 80℃) operation of a 2μm InGaSb-AlGaAsSb quantum well laser[J].半导体学报,2012,33(4):57-58. |
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| 作者姓名： | 张宇 王永宾 徐应强 徐云 牛智川 宋国峰 |
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| 作者单位： | Nano-Optoelectronics Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;National Laboratory for Superlattice and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
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| 基金项目： | Project supported by the Beijing Natural Science Foundation,China(No.4112058);the Science Foundation of the Chinese Academy of Sciences(No.CXJJ-11-M20) |
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| 摘 要： | 正An InGaSb/AIGaAsSb compressively strained quantum well laser emitting at 2μm has been fabricated. An output power of 82.2 mW was obtained in continuous wave(CW) mode at room temperature.The laser can operate at high temperature(T = 80℃),with a maximum output power of 63.7 mW in CW mode.
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| 关 键 词： | InGaSb/AlGaAsSb laser high-temperature operation |
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