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The effect of crystallographic orientation and solution aging on the electrical properties of sol–gel derived Pb(Zr0.45Ti0.55)O3 thin films |
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| Authors: | Ebru Mensur Alkoy Sedat Alkoy Tadashi Shiosaki |
| Affiliation: | aGraduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Nara 630-0101 Japan bDepartment of Physics, Kocaeli University, 41300 Izmit, Kocaeli, Turkey cDepartment of Materials Science & Engineering, Gebze Institute of Technology, 41400 Gebze, Kocaeli, Turkey |
| Abstract: | Lead zirconate titanate—Pb(Zr0.45Ti0.55)O3 thin films are grown on Pt 1 1 1 /Ti/SiO2/Si1 0 0 substrates by a sol–gel method with 1 0 0/0 0 1 and 1 1 1 preferred orientations. Film orientation was controlled mainly by the annealing process and temperature. Films with 1 0 0/0 0 1 orientation consist of a uniform microstructure with micron size grains, whereas films with 1 1 1 orientation contain sub-micron grains. The electrical properties were influenced markedly by the microstructure and orientation of the films. The 1 1 1 oriented films exhibit a square-like hysteresis loop with remnant polarization (Pr) reaching 46 μC/cm2 under 550 kV/cm, whereas 1 0 0/0 0 1 oriented films have a Pr of 20 μC/cm2 with more slim hysteresis curves. Aging of the precursor solutions resulted in films growing with 1 0 0/0 0 1 texture and displaying inferior electrical properties. |
| Keywords: | A Sol–gel processes C Ferroelectric properties D PZT Thin films |
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