Quantum confinement effect in SiO2 films containing Ge microcrystallites |
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Authors: | N Y Tang X M Wu L J Zhuge C N Ye W G Yao J Chen Y M Dong Y H Yu |
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Affiliation: | (1) Department of Physics, Suzhou University, Suzhou, 215006, People's Republic of China;(2) Ion Beam Lab., Shanghai Institute of Metallurgy, Academia Sinica, Shanghai, 200050, People's Republic of China |
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Abstract: | SiO2 thin films embedded with Ge microcrystallites (Ge-SiO2 films) were prepared by RF-magnetron co-sputtering method from a composite target of Ge and SiO2. The average size of Ge crystallites can be modulated by the experiment parameters. The optical absorption and non-linear optical properties of Ge-SiO2 films were measured. The blue shift of the optical absorption edge, the saturated absorption and two-photon absorption under the condition of resonant absorption have been observed, and are discussed according to the quantum confinement effect. |
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