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Quantum confinement effect in SiO2 films containing Ge microcrystallites
Authors:N Y Tang  X M Wu  L J Zhuge  C N Ye  W G Yao  J Chen  Y M Dong  Y H Yu
Affiliation:(1) Department of Physics, Suzhou University, Suzhou, 215006, People's Republic of China;(2) Ion Beam Lab., Shanghai Institute of Metallurgy, Academia Sinica, Shanghai, 200050, People's Republic of China
Abstract:SiO2 thin films embedded with Ge microcrystallites (Ge-SiO2 films) were prepared by RF-magnetron co-sputtering method from a composite target of Ge and SiO2. The average size of Ge crystallites can be modulated by the experiment parameters. The optical absorption and non-linear optical properties of Ge-SiO2 films were measured. The blue shift of the optical absorption edge, the saturated absorption and two-photon absorption under the condition of resonant absorption have been observed, and are discussed according to the quantum confinement effect.
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