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Accurate Determination of the Matrix Composition Profile of Hg1–xCdxTe by Secondary Ion Mass Spectrometry
Authors:Larry Wang  Alice Wang  Steve Price
Affiliation:(1) Evans Analytical Group, Sunnyvale, CA 95129, USA;(2) Raytheon Vision Systems, Goleta, CA 93117, USA
Abstract:In this report, we present a new secondary ion mass spectrometry (SIMS) analysis technique to provide accurate Cd composition profiles based on the measurement of HgCs+ and CdCs+ cluster ions. Study of Hg1–x Cd x Te samples with different x values shows that x/(1 − x) is linearly proportional to HgCs+/CdCs+ over the range of x = 0.2 to x = 0.9. This technique allows us to obtain an accurate Cd profile for a multilayer HgCdTe sample with different x values for each layer using a single standard with known x value. (Received 10/15/06; accepted 2/14/07)
Keywords:Secondary ion mass spectrometry (SIMS)  HgCdTe  composition analysis  depth calibration
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