Sidegating effect of GaAs MESFETs and leakage current in asemi-insulating GaAs substrate |
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| Authors: | Liu Y. Dutton R.W. Deal M.D. |
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| Affiliation: | Center for Integrated Syst., Stanford Univ., CA ; |
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| Abstract: | A series of measurements were made on test structures to study the sidegating effect of GaAs MESFETs. The results show that the small portion of the gate of a MESFET that is in direct contact with the semi-insulating substrate plays an important role in causing the observed rapid rise of leakage current and in enhancing the sidegating effect |
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