High-Quality (211)B CdTe on (211)Si Substrates Using Metalorganic Vapor-Phase Epitaxy |
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| Authors: | S R Rao S S Shintri J K Markunas R N Jacobs I B Bhat |
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| Affiliation: | (1) Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083 Beijing, China;(2) Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083 Beijing, China |
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| Abstract: | High-quality (211)B CdTe buffer layers are required during Hg1−x
Cd
x
Te heteroepitaxy on Si substrates. In this study, direct metalorganic vapor-phase epitaxy (MOVPE) of (211)B CdTe on Si, as
well as CdTe on Si using intermediate Ge and ZnTe layers, has been achieved. Tertiary butyl arsine was used as a precursor
to enable As surfactant action during CdTe MOVPE on Si. The grown CdTe/Si films display a best x-ray diffraction rocking-curve
full-width at half-maximum of 64 arc-s and a best Everson etch pit density of 3 × 105 cm−2. These values are the best reported for MOVPE-grown (211)B CdTe/Si and match state-of-the-art material grown using molecular-beam
epitaxy. |
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| Keywords: | |
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