| 钒受主能级在n型4H-SiC中的深能级瞬态傅里叶谱和光致发光 |
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| 引用本文： | 王超,张义门,张玉明,王悦湖,徐大庆.钒受主能级在n型4H-SiC中的深能级瞬态傅里叶谱和光致发光[J].半导体学报,2008,29(2):240-243. |
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| 作者姓名： | 王超 张义门 张玉明 王悦湖 徐大庆 |
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| 作者单位： | 西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安,710071;西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安,710071;西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安,710071;西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安,710071;西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安,710071 |
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| 基金项目： | 国家自然科学基金
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国家重点基础研究发展计划(973计划)
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国防部基础研究计划
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Key Program of the Ministry of Education,China |
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| 摘 要： | 借助深能级瞬态傅里叶谱研究了钒离子注入在SiC中引入的深能级陷阱.掺人的钒在4H-SiC中形成两个深受主能级,分别位于导带下0.81和1.02eVt处,其电子俘获截面分别为7.0 × 10-16和6.0×10-16cm2.对钒离子注入4H-SiC样品进行低温光致发光测量,同样发现两个电子陷阱,分别位于导带下0.80和1.6eV处.结果表明,在n型4H-SiC掺入杂质钒可以同时形成两个深的钒受主能级,分别位于导带下0.8±0.01和1.1±0.08eV处.
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| 关 键 词： | 4H-SiC 钒掺杂 受主能级 |
| 文章编号： | 0253-4177（2008）02-0240-04 |
| 收稿时间： | 2007-07-26 |
| 修稿时间： | 2007-09-18 |
Deep Level Transient Fourier Spectroscopy and Photoluminescence of Vanadium Acceptor Level in n-Type 4H-SiC |
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| Wang Chao,Zhang Yimen,Zhang Yuming,Wang Yuehu and Xu Daqing.Deep Level Transient Fourier Spectroscopy and Photoluminescence of Vanadium Acceptor Level in n-Type 4H-SiC[J].Chinese Journal of Semiconductors,2008,29(2):240-243. |
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| Authors: | Wang Chao Zhang Yimen Zhang Yuming Wang Yuehu and Xu Daqing |
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| Affiliation: | Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Institute of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Institute of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Institute of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Institute of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Institute of Microelectronics, Xidian University, Xi'an 710071, China |
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| Abstract: | Deep level transient Fourier spectroscopy (DLTFS) measurements are used to characterize the deep impurity levels in n-type 4H-SiC by vanadium ions implantation.Two acceptor levels of vanadium at EC-0.81 and EC-1.02eV with the electron capture cross section of 7.0e-16 and 6.0e-16 cm2 are observed, respectively.Low-temperature photoluminescence measurements in the range of 1.4~3.4eV are also performed on the sample, which reveals the formation of two electron traps at 0.80 and 1.16eV below the conduction band.These traps indicate that vanadium doping leads to the formation of two deep acceptor levels in 4H-SiC, with the location of 0.8±0.01 and 1.1±0.08eV below the conduction band. |
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| Keywords: | 4H-SiC vanadium doping acceptor level |
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