| 电子束光刻中邻近效应校正的几种方法 |
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| 引用本文： | 肖沛,孙霞,闫继红,丁泽军. 电子束光刻中邻近效应校正的几种方法[J]. 电子显微学报, 2005, 24(5): 464-468 |
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| 作者姓名： | 肖沛 孙霞 闫继红 丁泽军 |
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| 作者单位： | 中国科技大学结构分析重点实验室,物理系,安徽,合肥,230026;合肥学院数学与物理系,安徽,合肥,230026 |
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| 基金项目： | 国家自然科学基金;安徽省自然科学基金 |
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| 摘 要： | 本文简要介绍了限制电子束光刻分辨率的主要因素之一-邻近效应的产生机制,列举了校正邻近效应的GHOST法、图形区密集度分布法和掩模图形形状改变法,介绍了每种方法的原理、步骤和效果,比较了它们各自的优缺点.
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| 关 键 词： | 电子束光刻 邻近效应 |
| 文章编号： | 1000-6281（2005）05-0464-05 |
| 收稿时间： | 2005-04-25 |
| 修稿时间： | 2005-04-25 |
Methods of proximity effect correction in electron beam lithography |
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| XIAO Pei,SUN Xia,YAN Ji-hong,DING Ze-jun. Methods of proximity effect correction in electron beam lithography[J]. Journal of Chinese Electron Microscopy Society, 2005, 24(5): 464-468 |
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| Authors: | XIAO Pei SUN Xia YAN Ji-hong DING Ze-jun |
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| Affiliation: | 1 Structure Research Laboratory and Department of Physics, University of Science and Technology of China, Heifei Anhui 230026 ;2 Hefei College, Department of Mathematics and Physics, Hefei Anhui 230026, China |
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| Abstract: | Proximity effect is one of the most important limitations to the resolution of electron beam lithography. The mechanism of proximity effect was introduced. Some correction methods of proximity effect such as GHOST, pattern area density map and shape modification were described in detail, including its principle, correction procedure and efficiency. The advantages and shortages of these methods were also given. |
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| Keywords: | electron beam lithography proximity effect |
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