Effect of vacuum annealing and hydrogenation on ZnSe/Mn multilayer diluted magnetic semiconductor thin films

Multilayer thin films of ZnSe/Mn diluted magnetic semiconductor have been physically deposited onto a glass substrate using thermal evaporation technique and vacuum annealed at 333 K for 1 h at base pressure of 10⁻⁵ Torr. These thin films have been hydrogenated at different pressures (15-45 psi) for half an hour at room temperature. Hydrogenation process has been performed for as- grown as well as annealed thin films and named as-grown hydrogenated and annealed hydrogenated DMS thin films respectively. Structural characteristics of as-grown and vacuum annealed thin films have been performed by X-ray diffractometer. Current-voltage measurement has been studied for both as- grown hydrogenated and annealed hydrogenated DMS thin films by Keithly electrometer. X-ray diffraction pattern has been revealed nanocrystalline single phase of cubic zinc blende structure of film. Due to the annealing the conductivity has been found to be increased indicating the mixing of multilayer whereas the conductivity for as-grown hydrogenated and annealed hydrogenated ZnSe/Mn DMS thin films was found to be reduced indicating the electronic passivation effect of hydrogenation. Raman spectra of as-grown and annealed hydrogenated samples have been taken to see the presence of hydrogen in these samples. Surface topography of as-grown and annealed multilayer thin films has been confirmed by optical microscopy. Surface topography of annealed hydrogenated samples clearly shows the effect of hydrogenation at the surface.