Dual bridge 6 Gsample/s track and hold circuit inAlGaAs/GaAs/AlGaAs HEMT technology |
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| Authors: | Bushehri E. Thiede A. Staroselsky V. Timochenkov V. Lienhart H. Bratov V. Jakobus T. |
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| Affiliation: | Microelectron. Centre, Middlesex Polytech., London ; |
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| Abstract: | A T&H circuit with a sampling rate of 6 Gsample/s has been experimentally demonstrated in AlGaAs/GaAs/AlGaAs HEMT technology. The circuit utilises a dual bridge topology suitable for interleaved ADC circuits, doubling the effective sampling rate with an insignificant increase in area compared to the previously reported solutions |
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